发明名称 |
Semiconductor module and driving device for switching element |
摘要 |
A semiconductor module includes: a semiconductor element; first and second main current passages for energizing the semiconductor element, the first and second main current passages being opposed to each other in such a manner that a first energization direction of the first main current passage is opposite to a second energization direction of the second main current passage, or an angle between the first energization direction and the second energization direction is an obtuse angle; and a coil unit sandwiched between the first and second main current passages. The coil unit includes a coil, which generates an induced electromotive force when a magnetic flux interlinks with the coil, the magnetic flux being generated when current flows through the first and second main current passages. |
申请公布号 |
US9373570(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201414267513 |
申请日期 |
2014.05.01 |
申请人 |
DENSO CORPORATION |
发明人 |
Kawahara Hideki;Imazawa Takanori |
分类号 |
H01L23/495;H03K19/01;H03K17/04;H01L23/00 |
主分类号 |
H01L23/495 |
代理机构 |
Posz Law Group, PLC |
代理人 |
Posz Law Group, PLC |
主权项 |
1. A semiconductor module comprising:
a semiconductor element having a switching element with a control terminal; first and second main current passages for energizing the semiconductor element, the first and second main current passages being opposed to each other in such a manner that a first energization direction of the first main current passage is opposite to a second energization direction of the second main current passage, or an angle between the first energization direction and the second energization direction is an obtuse angle; and a coil unit sandwiched between the first and second main current passages, wherein the coil unit includes a coil, which generates an induced voltage when a magnetic flux interlinks with the coil, the magnetic flux being generated when current flows through the first and second main current passages, and wherein the induced voltage is overlapped on an applied voltage of the control terminal of the switching element. |
地址 |
Kariya JP |