发明名称 Semiconductor device of high power density - making contact with liquid metal filled capillary structures near coolers
摘要 <p>A semiconductor device of high power density has contacts directly with thermal and electric liquid-metal contacts which are in connection with cooler elements and surrounded by an insulating housing. The contact areas of the semiconductor device are a part of a horizontal capillary structure which is filled with liquid metal. A second peripheral capillary structure magnifies the heat transmission area to the cooler elements. The result is a contact system of the semiconductor wafer which requires either no pressure or a pressure of 150N/cm2(100N/cm2).</p>
申请公布号 DE2817715(A1) 申请公布日期 1979.10.31
申请号 DE19782817715 申请日期 1978.04.22
申请人 BROWN,BOVERI & CIE AG 发明人 GROSS,FRANZ,DIPL.-PHYS.DR.;MUELLER,ELMAR,DIPL.-ING.
分类号 H01L23/051;H01L23/367;H01L23/373;H01L23/433;H01L23/48;(IPC1-7):H01L21/288 主分类号 H01L23/051
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