发明名称 |
Semiconductor device of high power density - making contact with liquid metal filled capillary structures near coolers |
摘要 |
<p>A semiconductor device of high power density has contacts directly with thermal and electric liquid-metal contacts which are in connection with cooler elements and surrounded by an insulating housing. The contact areas of the semiconductor device are a part of a horizontal capillary structure which is filled with liquid metal. A second peripheral capillary structure magnifies the heat transmission area to the cooler elements. The result is a contact system of the semiconductor wafer which requires either no pressure or a pressure of 150N/cm2(100N/cm2).</p> |
申请公布号 |
DE2817715(A1) |
申请公布日期 |
1979.10.31 |
申请号 |
DE19782817715 |
申请日期 |
1978.04.22 |
申请人 |
BROWN,BOVERI & CIE AG |
发明人 |
GROSS,FRANZ,DIPL.-PHYS.DR.;MUELLER,ELMAR,DIPL.-ING. |
分类号 |
H01L23/051;H01L23/367;H01L23/373;H01L23/433;H01L23/48;(IPC1-7):H01L21/288 |
主分类号 |
H01L23/051 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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