SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure capable of holding memory contents even in a situation where no power is supplied, and having no restriction in the number of writing.SOLUTION: The semiconductor device is configured in such a way that: a plurality of memory cells each including a first transistor 160, a second transistor 162, and a capacitive element 164 is arranged in a matrix; and wire 156 (also referred to as a bit line) connecting between one of the memory cells with the other memory cell and a source electrode or a drain electrode 142a in the first transistor are electrically connected with each other via the source electrode or the drain electrode 142b in the second transistor.EFFECT: Since the number of wires can be reduced compared to a case where the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected with different wires, integration degree of the semiconductor device can be improved.SELECTED DRAWING: Figure 1