Integrated solution for solid state light sources in a process chamber

摘要

Apparatus for providing pulsed or continuous energy in a process chamber, and methods of fabricated said apparatus, are provided herein. The apparatus may include a substrate having a plurality of electrical terminals disposed on one or more surfaces of the substrate, a plurality of solid state sources grown on top of the plurality of electrical terminals, the plurality of solid state sources providing pulsed or continuous energy when electrically powered, and one or more cooling channels formed in one or more areas of the substrate.

主权项

1. An apparatus for providing pulsed or continuous energy in a semiconductor process chamber, the apparatus comprising:
a substrate having a plurality of electrical terminals disposed on one or more surfaces of the substrate, wherein the substrate includes:
a base substrate layer;a first metallic layer formed on a top surface of the base substrate layer;a first dielectric layer disposed over the first metallic layer; anda plurality of cavities formed in the first dielectric layer that expose the first metallic layer at a bottom of each cavity, wherein the plurality of cavities are filled with a metallic material to form the plurality of electrical terminals; a plurality of solid state sources grown on top of the plurality of electrical terminals, the plurality of solid state sources providing pulsed or continuous energy when electrically powered; and one or more cooling channels formed in one or more areas of the substrate.