Semiconductor package and manufacturing method thereof

摘要

The present disclosure provides a semiconductor structure. The semiconductor structure includes a carrier, a first redistribution layer (RDL) over the carrier, a semiconductor die over the first RDL, an adhesive layer between the semiconductor die and the first RDL, and a molding compound encapsulating the first RDL, the semiconductor die, and the adhesive layer. The first RDL includes at least one pattern electrically isolated from any component of the semiconductor structure. The present disclosure provides a method for manufacturing a semiconductor structure discussed herein. The method includes forming an RDL on a carrier, defining an active portion and a dummy portion of the RDL, and placing a semiconductor die over the dummy portion of the RDL.

主权项

1. A semiconductor structure, comprising:
a first redistribution layer (RDL), comprising at least one pattern electrically isolated from any component of the semiconductor structure; a semiconductor die over the first RDL, at least one contact pad being positioned on a front side of the semiconductor die; an adhesive layer between a back side of the semiconductor die and the first RDL, the back side is opposite to the front side; and a molding compound, encapsulating the first RDL, the semiconductor die, and the adhesive layer, and a through package via (TPV) penetrating the molding compound and electrically connecting the front side and the first RDL.