| 摘要 |
<p>PURPOSE:To obtain a nonvolatile semiconductor memory unit with small area and low power consumption for one bit, by making use of the charge pump function of a nonvolatile insulation-gate type device for the supply of power to a memory cell. CONSTITUTION:Memory cell 10 is equipped with nonvolatile filp-flop 11, which has a bistable circuit composed of a couple of MOS type driving transistors Q11 and Q12 and includes a couple of nonvolatile insulation-gate devices MC1 and MC2 whose one-side terminals are connected to bistable terminals N11 and N12 with the other-side terminals connected to common control line MG. The memory cells 10 are arrayed in the column and row directions to constitute a memory array. Control lines MG of memory cells 10 are bundled in the column and row directions and connected to write signal applying method 20, memory recovery signal applying method 30, erasing signal applying method 40, and charge-pump signal applying method 50.</p> |
