| 摘要 |
<p>PURPOSE:To obtain the crystal layer haing film thickness distribution depending on the size of the window of mask, by providing the mask of a given pattern blocking the growing of crystal on the substrate and controlling the degree of supersaturation of grown solution. CONSTITUTION:On the N type GaAs substrate 1, the mask 2 of the Si3N4 film blocking growing of crystal is formed so that the width a at the center is wide and narrow at the light emitting edges as width h. Further, the growing boat allocating the substrate 1 is constituted with the graphite made slide plate 4 having the concave containing the substrate 1 and the graphite made boat 3 having four solution pools placed on it. After that, the solutions 51 to 54 are having specified content respectively put in the solution pools, and the height of 52 is lower than other solution, and on it, polycrystal plate 6 is placed so that the solution 52 is at thermal equilibrium. After that, the substrate 1 is made wet with the solutions 51 to 54 sequentially, growing the N type GaAs layer 7, P type GaAs layer 8, P type AlAs layer 9, and P type GaAs layer 10 on the substrate 1 so that they are thick at the light emitting edge.</p> |
