| 摘要 |
<p>PURPOSE:To improve efficiency of luminescence by preventing O2 in a p-type layer from lowering. CONSTITUTION:Solution container 16 is sealed hermetically by lid 18 and Ga solution 22 containing the fixed quantities of zn and GaO is contained. To perform epitaxial growth of p-type GaP by using this device, an Ar gas atmosphere containing O2 should be formed inside of substrate container 10 as well. The density of O2 is set to 1 to 20%. Without this range, luminescence efficience never improves and with the density more than 20%, a substrate deteriorates. Then, containers 10 and 16, lid 18, substrate support desk 12, and sliding board 20 are made of a material inactive against O2. Otherwise, deterioration by O2 is caused to lower the airtightness of the device and O2 in Ar and dopants in the solution volatilize from a gap to make the acceptor density in the p-type layer uneven, so that characteristics and reproduciblity of an obtained element will deteriorate. Then, those are constituted by using independently or combinationally quartz, sapphire and other metal oxide.</p> |
