发明名称 SEMICONDUCTOR DEVICE WITH PASSIVATING LAYER
摘要 A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si3N4, Al2O3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.
申请公布号 AU504667(B2) 申请公布日期 1979.10.25
申请号 AU19750085991 申请日期 1975.10.24
申请人 SONY CORP. 发明人 T. MATSUSHITA;H. HAYASHI;T. AOKI;H. MOCHIZUKI
分类号 H01L21/322;H01L21/314;H01L21/331;H01L21/8247;H01L23/31;H01L29/06;H01L29/73;H01L29/78;H01L29/788;H01L29/792;H01L29/861;(IPC1-7):H01L29/12;H01L29/76;H01L27/00 主分类号 H01L21/322
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