| 摘要 |
<p>PURPOSE:To secure the stabilized formation of the beam lead featuring good high- frequency characteristics by reducing one side of the device completed with use of the thick semiconductor substrate. CONSTITUTION:The window is drilled to oxide film 2 on semiconductor substrate 1 to form Schottky junction 3, and anode and cathode lead-out electrode 4 and 5 are provided. Groove 6 is cut on the substrate backs of electrode 4 and 5 with the width equal to the length of 4 and 5 and the depth of 1/2 thickness of substrate 1. After this, groove 7 featuring the depth of more than half of the thickness of the substrate is cut from the surface of the substrate and vertically to groove 6. The uncut part is given the chemical etching, thus the Schottky diode bar of the beam lead structure being separated easily. As a result, the parasitic capacity of electrode 4 and 5 can be reduced via oxide film 2.</p> |
