| 摘要 |
PURPOSE:To obtain broad dynamic range, by providing the channel stop which keeps the change carrier in the charge transfer channel and the carrier storage section close to the channel or in it. CONSTITUTION:The injection diode 19 and the detection diode 22 are formed in the semiconductor substrate 10 isolatedly each other, and the entire surface is covered with the insulation layer 11. Further, on the layer 11, corresponding to the diode 19 on the layer 11, the injection gate 20 is provided inside and the channel stop 23 is provided outside, forming the detection gate 21 inside the diode 22 and the channel stop 23 outside the diode 22. After that, at the edge of the diode 19, the pad 16 is provided, the piezoelectric layer 12 is coated on the entire surface of element, a series of electrode 24 is formed at the center, and the entire surface is covered with the insulation layer 13. Futher, the comb type electrode 15 and the conductor layer 14 are coated corresponding to the pad 16 and the electrode 24 on it, high frequency voltage is fed to the electrode 15 to cause the waves 18 of potential toward the arrow 17 to store the charge 25 on the storage section 30 of it. |
