发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A power device 5 comprises: a semiconductor chip 2; a chip-mounting part 1c; a solder material 6 that electrically connects a rear face electrode 2e of the semiconductor chip 2 to an upper surface 1ca of the chip-mounting part 1c; a plurality of inner lead parts 1a and outer lead parts 1b electrically connected to an electrode pad 2d of the semiconductor chip 2 via a wire 4b; and an encapsulation body 3 that encapsulates the semiconductor chip 2 and the wire 4. Further, a recessed part 2f is formed at a peripheral edge part of a rear face 2b of the semiconductor chip 2. The recessed part 2f has a first surface continued to the rear face 2b, and a second surface continued to the first surface. A metal film is formed on the first surface and the second surface of the recessed part 2f.SELECTED DRAWING: Figure 2
申请公布号 JP2016157880(A) 申请公布日期 2016.09.01
申请号 JP20150036043 申请日期 2015.02.26
申请人 RENESAS ELECTRONICS CORP 发明人 KASHIWAZAKI TOMOYA
分类号 H01L21/52;H01L23/48;H01L25/07;H01L25/18 主分类号 H01L21/52
代理机构 代理人
主权项
地址