发明名称 FORMING METHOD FOR GOLD PATTERN
摘要 PURPOSE:To form a minute thick gold pattern for an X-ray exposure mask, etc. with accuracy by coating a resist pattern with a Ni thin film; removing parts of the Ni thin film which parts are one the resist to form a Ni thin film pattern; and etching a gold film. CONSTITUTION:Gold is vacuum deposited on substrate 1 such as silicon, and gold is further deposited by electroplating to form gold film 2, which is coated with a positive type resist film. Desired parts of the resist film are exposed to ultraviolet rays through a chromium mask and developed to form resist pattern 4. Pattern 4 is then coated with Ni thin film 5 by vacuum deposition, and resist 5 is dissolved to remove parts of film 5 which parts are on the resist, forming Ni thin film pattern 6. By scanning O2<+> ion beam or the like, the exposed gold film parts are etched by ion milling, and pattern 6 is removed to form gold pattern 7.
申请公布号 JPS54135639(A) 申请公布日期 1979.10.22
申请号 JP19780043043 申请日期 1978.04.12
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KOTAKE SHIYUUSUKE;OANA YASUHISA
分类号 C23F1/00;C23F4/00 主分类号 C23F1/00
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