发明名称 |
System and method for converting chemical energy into electrical energy using nano-engineered porous network materials |
摘要 |
An energy conversion device for conversion of chemical energy into electricity. The energy conversion device has a first and second electrode. A substrate is present that has a porous semiconductor or dielectric layer placed thereover. The porous semiconductor or dielectric layer can be a nano-engineered structure. A porous catalyst material is placed on at least a portion of the porous semiconductor or dielectric layer such that at least some of the porous catalyst material enters the nano-engineered structure of the porous semiconductor or dielectric layer, thereby forming an intertwining region. |
申请公布号 |
US9437892(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201313945864 |
申请日期 |
2013.07.18 |
申请人 |
QUSWAMI, INC. |
发明人 |
Gidwani Jawahar;Hazeghi Arash;Lam Andrew;Horvath Attila |
分类号 |
H01M4/10;H01M8/10;B82Y30/00;H01M4/86;H01M14/00;H01M8/22;H01M4/90;H01M4/92 |
主分类号 |
H01M4/10 |
代理机构 |
Kaye Scholer LLP |
代理人 |
Kaye Scholer LLP |
主权项 |
1. An energy conversion device for conversion of chemical energy into electricity, comprising:
a first electrode; a substrate connected to said first electrode; a porous semiconductor layer disposed over said substrate, said porous semiconductor layer having a nano-engineered structure; a porous catalyst material on at least a portion of said porous semiconductor layer, wherein at least some of the porous catalyst material enters the nano-engineered structure of the porous semiconductor layer to form an intertwining region, the porous catalyst material and the porous semiconductor layer forming solid-state junctions, the solid-state junctions are Schottky diode junctions; anda second electrode, wherein electrons from the porous catalyst material are injected into the porous semiconductor layer, and wherein an electrical potential is formed between the first electrode and a second electrode during chemical reactions between a fuel, the porous catalyst material and the porous semiconductor network. |
地址 |
San Francisco CA US |