| 发明名称 |
ARTIFICIALLY ENGINEERED III-NITRIDE DIGITAL ALLOY |
| 摘要 |
A material structure and system for generating a III-Nitride digital alloy. |
| 申请公布号 |
US2016260804(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615061156 |
申请日期 |
2016.03.04 |
| 申请人 |
LEHIGH UNIVERSITY |
发明人 |
TANSU Nelson;SUN Wei;TAN Chee-Keong |
| 分类号 |
H01L29/15;H01L29/20;H01L29/205;H01L21/02 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a III-Nitride quaternary digital alloy (“DA”) of AlGaInN comprising:
generating a periodic structure of closely separated binary alloy layers, each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-2 monolayers (“ML”s) and said periodic structure of binary alloy layers has a total thickness of between 10-50 periods. |
| 地址 |
Bethlehem PA US |
