| 摘要 |
There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s). |
| 主权项 |
1. An image sensor comprising:
a plurality of pixels, at least one of the pixels including: a first photoelectric conversion part; a second photoelectric conversion part; a third photoelectric conversion part; a fourth photoelectric conversion part; an amplification transistor; a reset transistor; and a selection transistor, wherein each of the amplification transistor, the reset transistor, and the selection transistor is shared by the first photoelectric conversion part, the second photoelectric conversion part, the third photoelectric conversion part, and the fourth photoelectric conversion part, and wherein the first photoelectric conversion part overlaps a gate electrode of the amplification transistor, a gate electrode of the reset transistor, and a gate electrode of the selection transistor. |
