发明名称 PROTECTIVE CIRCUIT FOR FILELD MEFFECT TRANSISTOR AMPLIFIER
摘要 A cct. for protecting a depletion-type FET was comprised of detecting cct.(14) for detecting the load current of the amplifier cct. and normally-opened switching cct.(15) controlled by the output of the detecting cct. and supplying a part of the input signals to the load directly. The normally-opened switching cct. was closed if the load current increased a fixed value, so that the voltage between gate and source of the FET was fixed close to the pinch-off voltage, thus limiting drain current of the FET.
申请公布号 KR790001470(B1) 申请公布日期 1979.10.20
申请号 KR19740002249 申请日期 1974.04.20
申请人 SONY CO LTD 发明人 ZZEURUSIMA KAZUAKI
分类号 H02H7/20;H02H9/04;(IPC1-7):H02H7/20 主分类号 H02H7/20
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