发明名称 NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal producing method capable of suppressing the occurrence of cracking in the nitride semiconductor crystal and thereby ensuring the enhancement of the nitride semiconductor crystal yield, and a nitride semiconductor epitaxial wafer and a nitride semiconductor freestanding substrate.SOLUTION: A nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying etching to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.SELECTED DRAWING: Figure 3
申请公布号 JP2016166129(A) 申请公布日期 2016.09.15
申请号 JP20160086458 申请日期 2016.04.22
申请人 SUMITOMO CHEMICAL CO LTD 发明人 FUJIKURA HAJIME;KONNO TAICHIRO;OSHIMA YUICHI
分类号 C30B29/38;C23C16/34;C23C16/458;C30B25/14;H01L21/205 主分类号 C30B29/38
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