发明名称 |
NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal producing method capable of suppressing the occurrence of cracking in the nitride semiconductor crystal and thereby ensuring the enhancement of the nitride semiconductor crystal yield, and a nitride semiconductor epitaxial wafer and a nitride semiconductor freestanding substrate.SOLUTION: A nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying etching to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016166129(A) |
申请公布日期 |
2016.09.15 |
申请号 |
JP20160086458 |
申请日期 |
2016.04.22 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
FUJIKURA HAJIME;KONNO TAICHIRO;OSHIMA YUICHI |
分类号 |
C30B29/38;C23C16/34;C23C16/458;C30B25/14;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|