| 摘要 |
PURPOSE:To obtain a heat treatment unit which can prevent wafer defects by fitting a heat reflection material near a coil. CONSTITUTION:First, wafer 11 is put on susceptor 12 so that one main face of wafer 11 may be brought into contact with susceptor 12 and is put into quartz tube 13. Next, a voltage is applied to coil 14 to subject susceptor 12 to induction heating. Consequently, the temperature of wafer 11 on susceptor 12 rises due to the heat conduction from susceptor 12 and the reflection heat dependent upon reflection plate 21. Thought the radiated heat from susceptor 12 is reflected by reflection plate 21, the needless heated radiated heat is emitted from exhaustion exit 16 which epitaxial furnace main body 15 has. Continuously, H2 is flowed into quartz tube 13 as carrier gas, and reactive gas such as silicon tetrachloride is injected to grow a single crystal Si layer on wafer 11. As a result, the temperature rise of wafer 11 is caused by the temperature rise from the lower face of wafer 11 dependent upon the heat conduction from sucseptor 12 and the temperature rise from the upper face of wafer 11 dependent upon the reflection heat from reflection plate 21 which reflects the radiated heat from susceptor 12, and wafer 11 is heated from the upper face and the lower face, and the temperature difference in the wafer face is eliminated. |
