| 摘要 |
PURPOSE:To reduce the influence of heating from a high-resistance part by providing a low-resistance region near an active element and separating the high resistance from the active element. CONSTITUTION:Semiconductor substrate 11 is provided with transistor 12 and resistance 13. Resistance 13 shares a part of the region with a diffusion region in the part which approaches transistor 12. Diffusion region 14 has the same conduction type as resistance 13 and is different from resistance 13 in impurity density and distribution and is so formed that diffusion region 14 may have a resistance lower than resistance 13. Then, since the resistance value becomes small in the part where resistance 13 and diffusion region 14 are superposed to each other, a calorific value is reduced and the thermal influence on transistor 12 is reduced. |
