| 摘要 |
The invention relates to a semiconductor store comprising a plurality of storage cells consisting of an MOS selector transistor (AT) and a storage capacitor (CS) connected thereto, and drive lines (BL, WL) for operating the cells. For production reasons, it is desirable to use polysilicon paths (PS) or diffused paths (D) as the drive lines, and in order to increase the conductivity of the lines and thus the transit times, in accordance with the invention, polysilicon paths are provided with an outer layer of a metal silicide (SZ), or in the case of diffused paths, the diffused path zone (D) is covered with a polysilicon layer (PS) having an outer layer of silicide (SZ). The silicide layer may be formed by depositing a suitable metal on the surface of the polysilicon and heating to form the silicide. <IMAGE> |
