发明名称 |
AMORPHOUS SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME |
摘要 |
An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith. |
申请公布号 |
JPS54133885(A) |
申请公布日期 |
1979.10.17 |
申请号 |
JP19790033167 |
申请日期 |
1979.03.20 |
申请人 |
ENERGY CONVERSION DEVICES INC |
发明人 |
SUTANFUOODO ROBAATO OBUSHINSUK;KURISHIYUNA SAPURU |
分类号 |
H01L29/73;H01L21/203;H01L21/205;H01L21/331;H01L29/04;H01L29/167;H01L29/30;H01L31/04;H01L35/14;H01L35/22 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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