发明名称 MANUFACTURE FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To enable no wafer crack in solder welding, no working efficiency decrease in split process and to make excellent the solderability. CONSTITUTION:At the back of the Si substrate 10, the alloy layer 4 with Ni is provided, and the layer 4 for split part is eliminated in advance. Next, the substrate 10 is dipped in the molten solder vessel and the solder 5 is selectively welded on the alloy layer. The thermal stress in case is split to each element and it is very small as the entire substrate, then the substrate is not cracked and split can completely be made because of no solder between elements.</p>
申请公布号 JPS54133071(A) 申请公布日期 1979.10.16
申请号 JP19780040987 申请日期 1978.04.06
申请人 发明人
分类号 H01L21/52 主分类号 H01L21/52
代理机构 代理人
主权项
地址