| 摘要 |
PURPOSE:To enhance the current density of a resin-sealed semiconductor device having satisfactory bondability with gold wirings and excellent corrosion resistance by composing a 2-layer structure of a wiring layer part connected with gold wirings in such a manner that its lower layer is composed of Al containing 3% of Cu and 1.5% of Si and its upper layer is composed of Al containing 2% of Cu and 1% of Si. CONSTITUTION:A resin-sealed semiconductor device is formed in such a manner that an interconnection layer part 7 connected with gold wirings 8 is formed in a 2-layer structure in which its lower layer 10 is composed of Al containing 3% of Cu and 1.5% of Si. Its upper layer 11 is composed of Al containing 2% of Cu and 1% of Si, and the layer 10 is covered with Al 14 containing low Cu content with satisfactory corrosion resistance. Thus, even if a package 2 is formed of resin, its corrosion resistance is improved, satisfactory bondability with the gold wirings can be obtained, and the current density of the layer 7 can be raised. |
