| 摘要 |
PURPOSE:To obtain just the wiring function only with no current change of the active function and with no FET action even with crossing of the active region. CONSTITUTION:E- and D-type MOSFET e and d are provided on the p-type Si substrate with gate electrode 21a of poly Si formed via gate film 26. And wiring poly Si 21b is formed on film 26, and n<-> thin layer 27 is formed selectively and previously at the channel part of FET d and the area covered with wiring 21b under the conditions through which the threshold level of FET d is decided. The width of wiring 21b is set smaller than gate electrode 21a, and the voltage current property of substrate part r is set so that the normal resistance may be secured almost irrespective of the voltage (gate voltage) applied to layer 21b. Accordingly, no effect is given to the current flowing through part r of the active part even through wiring 21b features the cubic cross. Thus, no FET action is given to obtain quite another different kind of the circuit. As a result, the mask pattern can be simplified with increased degree of integration. |
