| 摘要 |
<p>PURPOSE:To change a luminous color from one PN junction according to the change of a forward-direction conduction current by making the surface impurity density of a p-type layer, which constitute the PN junction, higher than the surface impurity density of a N-type layer. CONSTITUTION:N-type layer 12 of surface density 1X10<16> to 1X10<18> atoms/cm<3> with donor impurity Te of S added is grown epitaxially on N-type substrate 1 such as GaP in liquid phase. Next, p-type layer 13 of surface impurity density 5X10<16> to 5X10<18> atoms/cm<3> with acceptor impurity Zn and Ga oxide or Zn oxide added is grown epitaxially on layer 12 in liquid phase. At this time, impurity is added in an Ar or H2 gas atmosphere, and the acceptor impurity density is made higher than the donor impurity density by one digit. After that, the electrode layer consisting of AuZn or AuBe layer 14 and Au layer 15 and the electrode layer consisting of layer 16 and layer 17 are provided in the p side and on reverse face of substrate 1 respectively, and the substrate is diced to produce pellets.</p> |
