| 摘要 |
1496814 Semiconductor device passivation SONY CORP 20 March 1975 [30 March 1974] 11691/75 Heading H1K The surface of a semiconductor substrate is passivated by a polycrystalline silicon layer containing from 2 to 45 atomic per cent oxygen. The layer may be applied to the PN junction of a rectifying diode but as described is applied to at least the guard ring protected collector junction of a diffused planar silicon transistor formed in an N type substrate or an N epitaxial layer on an N + substrate. In manufacture the oxide masking used in the diffusion steps is removed and the polycrystalline layer deposited from a mixture of silane and nitrous oxide in a flow of nitrogen with the substrate at 600- 750‹ C., and overcoated with vapour grown silicon dioxide optionally separated from the ploysilicon by a moisture resistant layer, e.g. of aluminium. If silicon tetrachloride is used instead of silane a temperature of 1100‹ C is necessary. Alternative sources of oxygen are NO 2 , NO, O 2 and H 2 O vapour. The oxygen is present as a mixture of silicon monoxide and dioxide at the grain boundaries but is also dispersed in the grains themselves, the dispersion being removed by annealing, e.g. at 1100‹C for 30 minutes. The mean grain size is preferably from 100-1000 Š, and all the grains preferably have sizes within this range. Although the collector breakdown voltage falls with increasing oxygen content the leakage current decreases and if the emitter junction is also covered the amplification factor increases but remains stable. |
