发明名称 Near-surface thermal gradient enhancement with opaque coatings
摘要 A thin opaque layer of material is deposited on one or both major opposed surfaces of a semiconductor wafer to enhance establishing a thermal gradient near the major surface or surfaces to produce straight, fine molten wires (<0.002'') of a metal by migration of a melt of the metal through a solid, or matrix, both of semiconductor material by thermal gradient zone melting processing along a thermal gradient established and maintained aligned substantially parallel with a preferred crystal axis of migration by thermal gradient zone melting processing.
申请公布号 US4170491(A) 申请公布日期 1979.10.09
申请号 US19780967280 申请日期 1978.12.07
申请人 GENERAL ELECTRIC 发明人 ANTHONY, THOMAS R;CLINE, HARVEY E;HOUSTON, DOUGLAS E
分类号 H01L21/24;(IPC1-7):H01L21/22 主分类号 H01L21/24
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