发明名称 ION SULFURIZING* NITRIDING METHOD
摘要 PURPOSE:To nitride and sulfurize a product surface at the same time by ion engineering treatment, by introducing a mixed gas consisting of one or more out of H2, Ar and He, N2 and H2S into a vacuum and applying a DC voltage between the product as a cathode and an anode to produce glow discharge. CONSTITUTION:A mixed gas consisting of N2; 10-90 V%, H2S; 0.01 - 5 V% and the balance one or more out of H2, Ar and He is introduced into a vacuum below 0.1 Torr to regulate the vacuum degree to 1-5 Torr. In this vacuum chamber, a DC voltage is applied to a product to be treated as a cathode and an anode to produce glow discharge at 400-600 deg.C, thereby subjecting the product surface to ion sulfurizing and ion nitriding. Thus, a 3-50 mu thick sulfurized, nitrided layer is formed. The thickness is suitable for providing wear resistance and self-lubricity to the product surface.
申请公布号 JPS54128948(A) 申请公布日期 1979.10.05
申请号 JP19780036643 申请日期 1978.03.31
申请人 HITACHI LTD 发明人 KOJIMA YOSHIAKI;ASAHI NAOTATSU;YAMAGUCHI SHIZUKA
分类号 C23C8/36;C23C8/38 主分类号 C23C8/36
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