| 摘要 |
PURPOSE:To perform soldering for the Si substrate with Mo or W plate, without causing the occurrence of nest and the deterioration in performance. CONSTITUTION:Al3 is evaporated on the Mo plate 2, forming the MoAl alloy 4 by keeping it at more than 650 deg.C under vacuum. Further, the Al3a is evaporated. The Al3a is coated on the Si substrate, the both are laminated opposingly with the Al3a, and it is processed at 630 deg.C under vacuum, then no nest is caused between the Si substrate 1 and the Mo plate 2, performance is not deteriorated, and excellent device can be obtained. |
