| 摘要 |
PURPOSE:To improve the reliability and manufacture yield with the airtight strength of an Au layer improved, by interposing a Ti layer between the Mo layer and Au layer of a semiconductor device with a Schottky barrier. CONSTITUTION:On the surface of low-resistivity GaAs substrate 1 of one conduction type, GaAs epitaxial layer 2 of the same conduction type as substrate 1 is formed. After insulation film 3 is formed, Schottky barrier metal layer 4 made with Ti and metal layer 5 made with Mo are both formed. Next, wiring metal layer 6 made with Au is formed after metal layer 7 made of a Ti layer. Since Ti is excellent in the airtightness with Mo and Au, Au layer 6 will not break away in a bonding process, so that the reliability will improve. |
