发明名称 STRUCTURED COPPER STRAIN BUFFER AND SEMICONDUCTOR DEVICE STRUCTURE INCORPORATING THE BUFFER
摘要 <p>A structured copper strain buffer, which is thermally and electrically conductive is provided for use with semiconductor electronic devices. A thermo-compression diffusion bond is used to attach a metallic foil to a structured copper disk to form the strain buffer. The individual strands of copper within the strain buffer are capable of independent movement. The structured copper strain buffer provides a means of attachment to a semiconductor device without causing a stress to be generated at the attached surface of the device as the device expands and contracts with temperature changes.</p>
申请公布号 GB2017408(A) 申请公布日期 1979.10.03
申请号 GB19790009970 申请日期 1979.03.21
申请人 GENERAL ELECTRIC CO 发明人
分类号 H01L21/52;H01L21/58;H01L23/02;H01L23/04;H01L23/36;H01L23/373;H01L23/49;H01L23/492;(IPC1-7):01L21/60 主分类号 H01L21/52
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