| 摘要 |
PURPOSE:To obtain a thyristor which features a small amount of the gate current and the improved communication characteristics. CONSTITUTION:Pellet 9 contains thyristor part A, diode part B and intermediate isolation region C respectively. At part A, P-type diffusion region 11 and N-type diffusion region 12 are formed on N-type silicon substrate 10 along with electrode layer 13 and 14. And the silicon dioxide film 15 is formed on the interface between region 11 and 12 as well as on the surface of substrate 10. P-type diffusion region 16 is formed on the back of substrate 10, and furthermore common electrode layer 17 is formed. Electrode 13, 14 and 17 are metalized layers forming the low resistance contact. At part B, P-type diffusion region 18 and electrode layer 19 are formed on substrate 10. And at part C, the silicon dioxide film and electrode layer 17 are formed on both surfaces centering on substrate 10. |
