发明名称 Purification of silane for semiconductor mfr. - by passing through series of absorption zones; liquefying and distilling
摘要 <p>Impure silane is improved by passing the mixt. through a series of zones in a closed system. The mixt. is first passed as a gas into a zone contg. granular or porous carbon capable of absorbing substances at -40 to -80 degrees C and the silane and gaseous impurities are recovered in the gaseous state. It is then passed into a zone contg. granular or porous magnesium silicate having similar properties. The gas mixt. is then passed into a distd. zone where >95 wt. % of the silane is liquefied while the impurities remain gaseous. Finally the silane is then distilled and recovered. Used for the mfr. of Si for electronic use. Very high purity Si is obtd.</p>
申请公布号 NL7803471(A) 申请公布日期 1979.10.02
申请号 NL19780003471 申请日期 1978.03.31
申请人 UNION CARBIDE CORPORATION TE NEW YORK. 发明人
分类号 C01B33/04;(IPC1-7):01B33/04;01D53/02 主分类号 C01B33/04
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