| 摘要 |
PURPOSE:To prevent charge overflow in a transfer time to give linearity even to high frequency input signals and stabilize transfer characteristic by making the size of the first-stage cell smaller than the size of transfer cells in a CCD having plural cells. CONSTITUTION:N-type source region 12 is formed on P-type Si substrate 11, and plural electrodes 141 to 148 are provided through SiO2 film 13 on substrate 11 and are connected in couples commonly to constitute one cell by a pair of connected electrodes respevtively. In this constitution, charge sampling signals phis, input signals phiin, and alternate clock signals phi1 and phi2 are applied to each cell. Meanwhile, P<+>-type regions 151, 153, 155 and 157 are provided just below electrodes 141, 143, 145 and 147; and when a high-level clock is applied to electrode 141, the potential of region 12 is made nearer to the ground potential than the surface potential below electrode 141. Similarly, when a low-level clock is applied to electrode 141, the potential of region 12 is made higher. Thus, a stable transfer characteristic is obtained. |
