| 摘要 |
PURPOSE:To obtain a high-quality grown layer by first irradiating the ion of the molecule or the atom featuring the same component elements as the substrate or the grown crystal in the voltage-reduced atmosphere to eliminate the surface contamination material in case the crystal is grown on the semiconductor substrate through the molecular beam eiptaxial method. CONSTITUTION:Semiconductor substrate 2 held by substrate holder 3 is put into the vacuum tank which constututes the molecular beam epitaxial device, and then molecular beam source 5 is provided oppositely to substrate 2. At the same time, heat conductive cooling cylinder 22 which is supported by heat conductive cooling plate 24 and contains ion analyzer 23 inside is installed between substrate 2 and source 5, along with auxiliary molecular beam source 4 supported by heat conductive plate 21. Then the voltage is reduced within the device thus constituted, and the P4 molecule is evaporated in the case of substrate 2 of InP prior to the molecular beam epitaxial growth. The evaporated molecule is ionized via analyzer 23 and supplied on the surface of substrate 2 to carry out the ion etching. |
