| 摘要 |
PURPOSE:To obtain a monolithic lens which is high in positioning accuracy and superior in mass productivity by further developing it by the emission of an element itself to postbake after flowing current in the element to emit and negative type resist is applied on an emitting face to prebake. CONSTITUTION:After negative type resist 14 is applied on an n-type InP substrate 6 except for a part of a cathode electrode 5, an emission strength distribution of an element shows projection type one and an exposed area is the projection type one when the negative type resist 14 is prebaked to make organic solvent volatile, current is flowed in an anode electrode 1 and the cathode electrode 5 to emit an element and the negative type resist 14 is exposed. Since a projection type exposed area 15 is left when it is developed, the n-type InP substrate 6 is etched in the same form as the exposed area 15 and a monolithic lens can be shaped when it is postbaked to solidify and the etching rate of an exposed area 15 to the n-type InP substrate 6 is selected as 1:1 and the like by the use of a RIE on the area 15 exposed in the form of a projection type lens. Therefore, the monolithic lens high in forming accuracy and superior in mass productivity can be obtained. |
