| 发明名称 |
Method for making a deep diode magnetoresistor |
| 摘要 |
Thermal gradient zone melting (TGZM) is employed to make a semiconductor magnetoresistor device embodying a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by TGZM to maximize the increase in the current path in a magnetic field established in the device.
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| 申请公布号 |
US4168991(A) |
申请公布日期 |
1979.09.25 |
| 申请号 |
US19780972241 |
申请日期 |
1978.12.22 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ANTHONY, THOMAS R.;CLINE, HARVEY E. |
| 分类号 |
H01L21/24;H01L43/08;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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