| 摘要 |
PURPOSE:To obtain the photo coupling element of trigger system and excellent in die-bonding, by bonding LED and Schckley diode in series with Au-Si eutetic alloy and fixing the back side of the diode to the metal frame with Au-Si eutectic alloy. CONSTITUTION:On the N type GaAs substrate 1, the Si dope N type GaAs layer 2 and Si dope P type GaAs layer 3 are laminated and liquid-phase grown epitaxially. The Al-Zn electrode 4 of a given p-attern is fitted on the layer 3, the Au-Ge layer 5 and Au layer 6 are evaporated at the rear side of the substrate 1, forming LED 100. On the other hand, the Au layer 11 is coated at the surface of P type layer of the anode side of the Schockley diode 200 providing PNPN junction in the Si substrate, the layer 6 is contacted to there, and LED 100 and the diode 200 are fixed with the Au-Si alloy layer 12 caused with heat treatment. After that, the notch reaching the diode 200 is made by clipping the electrode 4, the Au layer 14 is coated at the rear side of the diode 200. Pellets are made from the notch and fitted to the frame 15. |
