| 摘要 |
PURPOSE:To increase the transfer efficiency and then to ensure the high-speed operation for the charge-coupled semiconductor device of frame transfer system by securing the surface channel structure to the pickup part and the buried channel structure for both the storage part and the output register part. CONSTITUTION:The charge-coupled semiconductor device of frame transfer system is constituted as follows: a number of electrodes are provided on the semiconductor substrate via an insulator to form pickup part 1, storage part 2 and output register part 3 which feature three different functions. Part 1 is composed of the surface channel charge-coupled elements which use the interface between the substrate and the insulator provided on the substrate for transmission of the signal charge, and part 2 and 3 comprise the buried channel charge-coupled elements which use the opposite conducting impurity diffusion region provided on the substrate as the signal charge transmission line. Thus, the element performance can be enhanced. |
