| 摘要 |
PURPOSE:To form a high-output transistor at high yield with no increase in number of processes, by realizing the unit structure in which electrode metal layer will not intersect which connects an emitter lead-out electrode to a stabilized resistance layer. CONSTITUTION:Electrode metal layer 36 connecting P<+> stabilized resistance layer 34 and N<+> emitter layer 33 formed on a Si substrate, two emitter lead-out electrods 37a and 37b, and base lead-out electrode 38a and 38b are arranged in parallel. Because resistance layer 34 insertion-connected between electrodes 36, and 37a and 37b is formed in the perpendicular direction to the electrode metal layer. Since the need for crossing is eliminated, the number of processes will not increase and two electrodes 37 are parallel with the increase of the sectional area realized, so that it will be effective to obtain large power. In addition, since base connection layer 35 is provided onto the diagonal with emitter layer 33 made rectangular, the entire emitter circumference acts effectively and a large current is allowed to flow, so that a transistor with high frequency characteristics and excellent output characteristics can be realized. |
