发明名称 EPITAXIAL PROCESS OF FORMING FERRITE, FE3O4 AND ' FE2O3 THIN FILMS PECIAL MATERIALS
摘要 <p>EPITAXIAL PROCESS OF FORMING FERRITE, Fe3O4 AND .gamma.Fe2O3 THIN FILMS ON SPECIAL MATERIALS A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of polycrystals. A ferrite such as magnetite (Fe3O4) is sputtered from a target onto the first thin film forming a mixture of .gamma.Fe2O3 and Fe3O4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200.degree.C for both steps when sputtering or evaporation is employed.</p>
申请公布号 CA1062657(A) 申请公布日期 1979.09.18
申请号 CA19760249389 申请日期 1976.04.01
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AHN, KIE Y.;BAJOREK, CHRISTOPHER H.;ROSENBERG, ROBERT;TU, KING-NING
分类号 G11B5/66;C01G49/02;C23C14/08;G11B5/64;G11B5/73;G11B5/738;H01F10/18;H01F10/20;H01F41/14;H01F41/18;H01F41/28;(IPC1-7):23C15/00 主分类号 G11B5/66
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