| 摘要 |
PURPOSE:To improve the characteristics of the yielding voltage or the like and at the same time to simplify the manufacturing process of the diode by forming the opposite conducting region on the semiconductor substrate through diffusion with the ohmic electrode provided on the region and then forming the Schottky junction floating on both ends of the depletion layer which is expanded by the diffusion region. CONSTITUTION:P-type region 3 is formed by diffusion on N-type semiconductor substrate 1 with ohmic electrode 4 attached there. At the same time, ohmic electrode 5 is attached to the back of substrate 1. Then Schottky metal layer 8 is coated within the region of depletion layer 2 expanding by region 3 as if it enclosed region 3 and with a fixed distance from region 3. As a result, layer 8 is floating on substrate 1 to cause Schottky junction 9 between layer 8 and substrate 1. Thus, the occurrence of the voltage yield is reduced at the circumference of the junction. Furthermore, layer 8 can be formed sumultaneously with electrode 4, thus simplifying greatly the manufacturing process. |
