| 摘要 |
Amplifier cct. applicable as a EQ cct., equalizing the output of a cartridge of record player, was designed to obtain a high gain, a high S/N ratio and low output-impedance characteristic and comprised of a 2nd-amplifier cct.(A2) including a FET(Q2), and BJT(Q1) comprising a n-type 1st-semiconductor region(1)(I), p-type 2nd-semiconductor region(2)(II) adjoined to I and 3rd-semiconductor region(3) adjoined to II. The potential barrier formed in I was located at a position less than the diffusion length of the minority carrier of I.
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