发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To restrain the short-circuit to other electrodes and floating capacity increment to a minimum by removing an insulating film after opening a window in the insulating film to connect a wire to the exposed metallic film. CONSTITUTION:SiO2 film 14 is laminated on Si3N4 film 4 on GaAs substrate 3, and a window is selectively opened on electrode 5 to bond wire 6. After that, when film 14 is removed overall, wire 6 is prevented from contacting with insulating film 4 around electrode 5, and the generation of a floating capacity can be restrained to a minimum.
申请公布号 JPS54117681(A) 申请公布日期 1979.09.12
申请号 JP19780024807 申请日期 1978.03.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUZUKI TAKESHI;HATAKEYAMA HIRONOBU;ISHII TAKASHI
分类号 H01L21/60 主分类号 H01L21/60
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