发明名称 |
PROCESS FOR PRODUCING LARGE-SIZE SELF-SUPPORTING PLATES OF SILICON |
摘要 |
Process for producing large-size, self-supporting plates of silicon deposited from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 .mu.m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells. |
申请公布号 |
CA1062130(A) |
申请公布日期 |
1979.09.11 |
申请号 |
CA19760266985 |
申请日期 |
1976.12.02 |
申请人 |
WACKER-CHEMITRONIC GESELLSCHAFT FUER ELEKTRONIK-GRUNDSTOFFE M.B.H |
发明人 |
AUTHIER, BERNHARD;GRIESSHAMMER, RUDOLF;KOEPPL, FRANZ;LANG, WINFRIED;SIRTL, ERHARD;RATH, HEINZ-JOERG |
分类号 |
C01B33/02;C01B33/027;C23C16/01;C23C16/24;C30B13/00;C30B13/06;C30B25/02;C30B29/06;H01L21/205;H01L21/208;H01L31/04 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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