发明名称 |
High voltage monolithic transistor circuit |
摘要 |
Disclosed is a monolithic transistor circuit for high voltage applications. A high impedance bleed resistor is effectively provided across the emitter-base junction of one of the transistors. This is accomplished by placing the base regions of this and another transistor at a selected distance apart so that the zero bias depletion regions of the bases overlap to produce a punch through condition resulting in a desired current density therebetween when an external bias is supplied. The devices thus produced have a high current carrying capacity with low leakage currents.
|
申请公布号 |
US4167748(A) |
申请公布日期 |
1979.09.11 |
申请号 |
US19780921229 |
申请日期 |
1978.07.03 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
D"ANGELO, ROBERT S.;HARTMAN, ADRIAN R.;SHACKLE, PETER W. |
分类号 |
H01L27/07;H01L27/082;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/07 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|