发明名称 PROCEDIMENTO PER LA PRODUZIONE DI COMPLESSI DIODO-CONDENSATORE A SEMICONDUTTORE E PRODOTTO OTTENUTO
摘要 Wafers of silicon semiconductor material are stacked, bonded and severed to form a plurality of semiconductor diodes. One or more capacitor bodies are physically and electrically joined with these diodes, either by means of the capacitor bodies themselves or by means of an intermediate lead frame structure, in order to facilitate the handling and processing of the assembly as a unit.
申请公布号 IT7950225(D0) 申请公布日期 1979.09.10
申请号 IT19790050225 申请日期 1979.09.10
申请人 VARO SEMICONDUCTOR INC. 发明人 WALTER L.WILLS;HERCHEL A. VAUGHN;LARRY L. MILLER
分类号 H01L25/07;H01G4/40;(IPC1-7):H01L/ 主分类号 H01L25/07
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