| 摘要 |
PURPOSE:To enhance the photo detecting sensitivity with respect to a specific wavelength region, by combining photo detctors differing in the photo detection spectral characteristics. CONSTITUTION:Photo detectors 1, 2 differing in photo detection spectral wavelengths from each other, having the N side electrically connected with AU paste 3 and the P side Al electrodes 5, 6 connected with lead wires are housed in an insulated container 4, and molded with transparent resin 7. Thus, the photo detection spectral sensitivity characteristic of this photo detecting device shows the photo detection spectral characteristic having a high sensitivity only with respect to the light of wavelength corresponding to the difference between the photo detection spectral sensitivity characteristics of photo detectors 1 and 2, so that the intended purpose may be attained. Besides, due to the mixed crystal ratio of the substrate semiconductors constituting these photo detectors 1, 2, the longer wavelength end and the shorter wavelength end of the photo detection spectral sensitivity may be determined, so that a device having a high photo detection sensitivity only in a very narrow range showing steep rise and fall may be obtained. |
