| 摘要 |
PURPOSE:To restrict the bending or damage of wafers, by providing the reinforced layer to reinforce the mechanical strength of wafers on a part of the ohmic electrode formed on the semiconductor wafer and on the plated heat sink. CONSTITUTION:The first ohmic electrode 5 is formed on the n<+> type GaAs layer 3 of the GaAs wafer 4, the resist mask 7 enclosing the part on which the plated heat sink is formed is provided, forming the plated heat sink 6 made of gold, silver or copper. On the electrode 5 eliminating the mask 7 and on the heat sink 6, the reinforcement layer 14 to reinforce the mechanical strength of the wafer 4 is formed. The second ohmic electrode 8 is formed on the n<++> type GaAs substrate 1, the lead electrode 9 is placed on a part of the heat sink opposing, forming the GaAs gun diode element 10 on the heat sink 6. The reinforcement layer 14 supporting the heat sink 6 is separated by cut off, forming the pellet 11. |
